- 您现在的位置：买卖IC网 > Sheet目录131 > DSEP15-12CR (IXYS)DIODE FRED 1200V 15A ISOPLUS247
                  HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 μs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<25pF) International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Isolated and UL registered E153432 Applications Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf A = Anode, C = Cathode * Patent pending ISOPLUS 247TM A C Isolated back surface * C A ? 2000 IXYS All rights reserved 1 - 1 DSEP 15-12CR IFAV VRRM = 1200 V trr = 20 ns = 15 A VRSM VRRM Type V V 1200 1200 DSEP 15-12CR 018 Symbol Conditions Maximum Ratings IFRMS IFAVM IFRM 50 A TC = 130°C; rectangular, d = 0.5 15 A tP < 10 μs; rep. rating, pulse width limited by T VJM tbd A IFSM TVJ = 45°C; t p = 10 ms (50 Hz), sine 110 A EAS TVJ = 25°C; non-repetitive 0.1 mJ IAS = 1.0 A; L = 180 μH IAR VA = 1.25 ·VR typ.; f = 10 kHz; repetitive 0.1 A TVJ TVJM Tstg -55...+175 °C 175 °C -55...+150 °C Ptot TC = 25°C 150 W VISOL 50/60 Hz RMS; IISOL 1 mA 2500 V~ FC mounting force with clip 20...120 N Weight typical 6 g Symbol Conditions Characteristic Values typ. max. IR TVJ = 25°C V R = VRRM TVJ = 150°C V R = VRRM 100 μA 0.5 mA VF IF = 15 A; T VJ = 150°C 2.67 V TVJ = 25°C 4.04 V RthJC RthCH 1 K/W with heatsink compound 0.25 K/W trr IF = 1 A; -di/dt = 200 A/μs; 20 ns VR = 30 V; T VJ = 25°C IRM VR = 100 V; I F = 25 A; -di F/dt = 100 A/μs 4.0 4.9 A TVJ = 100°C Preliminary Data |